LiAsSe₂ is a ternary chalcogenide semiconductor compound combining lithium, arsenic, and selenium in a layered crystal structure. This material belongs to the family of mixed-valence semiconductors and is primarily of research interest rather than established in high-volume industrial production. Its potential applications center on infrared optics, solid-state batteries, and specialized photonic devices where its bandgap and optical transparency in the infrared region could provide advantages over more conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.98 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 19.45 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.497 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.100 | eV | Measured | ||
| ↳ | 0.3660 | eV | DFT · OptB88vdW | ||
| ↳ | 0.4440 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 25.41 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 12.28 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01350 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5986 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data