Li₅Si₂Bi₁O₈ is an experimental mixed-metal oxide semiconductor combining lithium, silicon, and bismuth in an anionic framework. This compound belongs to the family of lithium-based oxide semiconductors under active research for energy storage and photonic applications, where the bismuth incorporation may introduce bandgap modification or enhanced charge transport properties compared to binary lithium silicates.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 67.29 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 19.51 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.853 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.386 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data