LaZnAsO
semiconductorLaZnAsO is an experimental quaternary semiconductor compound composed of lanthanum, zinc, arsenic, and oxygen, belonging to the family of mixed-valence oxide semiconductors with potential applications in optoelectronic and photovoltaic device research. This material is primarily of academic and research interest rather than established in high-volume industrial production, with investigations focused on its electronic band structure and photocatalytic properties as part of broader efforts to develop new semiconductor platforms beyond conventional III-V and II-VI compounds. Engineers considering this material should recognize it as an emerging compound whose practical applicability depends on advances in synthesis, crystal quality, and demonstrated device performance relative to established alternatives like GaAs, InP, or CdZnTe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — median of 2 measurements | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |