LaVO3 is a perovskite oxide semiconductor composed of lanthanum and vanadium, belonging to the class of transition metal oxides with potential for electronic and photonic applications. This material is primarily investigated in research contexts for applications requiring semiconducting behavior combined with the structural stability of perovskites, such as photocatalysis, solid-state electronics, and energy conversion devices. LaVO3 is notable for its tunable electronic properties through doping and defect engineering, making it an attractive candidate where conventional semiconductors may lack the desired combination of stability, band gap control, and functional oxide characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.31 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 22.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.726 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.248 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)3 entries | 0.4000 | μB | — | ||
| ↳ | 1.988 | μB | — | ||
| ↳ | 0.00600 | µB | — | ||
Seebeck Coefficient(S) | 7.680 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -3.248 | eV/atom | — | ||
| ↳ | -0.1000 | eV/atom | — | ||
| ↳ | -3.127 | eV/atom | — |