LaTlO3 is a lanthanum thallium oxide ceramic semiconductor belonging to the perovskite family of materials. This compound is primarily of research interest for its potential in optoelectronic and photonic applications, where its layered perovskite structure offers tunable electronic and optical properties. Industrial adoption remains limited, but the material is investigated for high-permittivity dielectric applications and as a candidate for advanced semiconductor devices where lanthanum-based perovskites show promise over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,168.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 303.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3022 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.302 | eV | — | ||
| ↳ | 1.200 | eV | — | ||
| ↳ | 0.3090 | eV | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.0000511 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1285 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.287 | eV/atom | — | ||
| ↳ | 0.7000 | eV/atom | — | ||
| ↳ | -2.117 | eV/atom | — |