LaSiO2N — Properties & Data | MatWorld

LaSiO2N

semiconductor

· LaSiO2N

LaSiO₂N is a rare-earth oxynitride ceramic compound belonging to the family of lanthanum silicates modified with nitrogen incorporation. This material is primarily investigated in advanced materials research for high-temperature structural applications, optical devices, and photocatalytic systems where nitrogen doping enhances electronic properties and thermal stability compared to purely oxide counterparts.

high-temperature ceramicsphotocatalytic applicationsoptical semiconductorsnitrogen-doped oxides researchrefractory materials developmentadvanced electronics substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000777	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3000	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaSiO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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