Lanthanum disilicide (LaSi2) is an intermetallic semiconductor compound belonging to the rare-earth silicide family, characterized by a hexagonal crystal structure. It is primarily investigated as a high-temperature material for thermoelectric applications and as a precursor in the synthesis of rare-earth silicide composites, though it remains largely in the research and development phase rather than mainstream industrial production. Engineers would consider LaSi2 for specialized high-temperature environments where its thermal and electrical properties offer advantages over conventional semiconductors, particularly in thermopower generation and specialized refractory applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,732.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | -2,049.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1775 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.1900 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5887 | eV/atom | — | ||
| ↳ | -0.6595 | eV/atom | — |