Lanthanum phosphide (LaP) is a binary III-V semiconductor compound combining a rare-earth element with phosphorus, belonging to the wider family of phosphide semiconductors. It is primarily of interest in advanced optoelectronic and high-frequency electronic device research, where rare-earth phosphides are explored for their potential in infrared emitters, quantum well structures, and specialized heterostructure applications. Compared to common III-V semiconductors like GaAs or InP, LaP offers a distinct bandgap and lattice parameter profile that may enable novel device designs, though it remains largely in the research and development phase rather than high-volume production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,860.2 | ksi | — | ||
Poisson's Ratio(ν) | 0.1100 | - | — | ||
Shear Modulus(G) | 53.66 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1841 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.5400 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -27.59 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03530 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.683 | eV/atom | — |