LaNbN2O

semiconductor

· LaNbN2O

LaNbN₂O is an experimental oxynitride semiconductor compound combining lanthanum, niobium, nitrogen, and oxygen. This material belongs to the family of mixed-anion semiconductors being investigated for photocatalytic and optoelectronic applications, where the combination of nitrogen and oxygen ligands can engineer the bandgap and electronic structure compared to conventional oxides or nitrides. Research interest centers on its potential for solar energy conversion, water splitting, and visible-light photocatalysis, though it remains largely in the exploratory research phase without established high-volume industrial production.

photocatalytic water splittingsolar energy conversionvisible-light photocatalysisthin-film optoelectronicsenvironmental remediationresearch materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.700	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaNbN2O

Electrical Properties

Regulatory Screening

Environmental

Export Control