LaIrO2S is an experimental ternary oxide-sulfide semiconductor compound combining lanthanum, iridium, and oxygen/sulfur elements. This material belongs to the family of mixed-anion oxychalcogenides, which are emerging research candidates for photocatalysis, thermoelectric energy conversion, and optoelectronic devices due to their tunable band structures and potential for enhanced carrier mobility compared to single-anion oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | — | ||
Magnetic Moment(μB) | 0.0000972 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8600 | eV/atom | — |