LaInS2O
semiconductor· LaInS2O
LaInS₂O is a mixed-anion semiconductor compound combining lanthanum, indium, sulfur, and oxygen elements, representing an emerging class of oxysulfide materials. This material is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where the hybrid anionic framework offers tunable band structure and potential for visible-light absorption. While not yet established in high-volume industrial production, oxysulfide semiconductors like LaInS₂O are of interest to engineers developing next-generation photocatalysts, thin-film optoelectronics, and solid-state devices seeking alternatives to conventional single-anion semiconductors.
photocatalysis researchoptoelectronic thin filmsvisible-light absorptionsemiconductor device developmentwater splitting applicationsemerging material compounds
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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