LaInS2O

semiconductor

· LaInS2O

LaInS₂O is a mixed-anion semiconductor compound combining lanthanum, indium, sulfur, and oxygen elements, representing an emerging class of oxysulfide materials. This material is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where the hybrid anionic framework offers tunable band structure and potential for visible-light absorption. While not yet established in high-volume industrial production, oxysulfide semiconductors like LaInS₂O are of interest to engineers developing next-generation photocatalysts, thin-film optoelectronics, and solid-state devices seeking alternatives to conventional single-anion semiconductors.

photocatalysis researchoptoelectronic thin filmsvisible-light absorptionsemiconductor device developmentwater splitting applicationsemerging material compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.730	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaInS2O

Electrical Properties

Regulatory Screening

Environmental

Export Control