LaInOFN is an experimental oxynitride semiconductor compound containing lanthanum, indium, oxygen, and nitrogen elements, representing a member of the rare-earth oxynitride family under active research. This material is primarily investigated for photocatalytic and optoelectronic applications where visible-light sensitivity and tunable bandgap are desirable; it competes with traditional semiconductors like TiO₂ by offering the potential for improved performance under solar illumination, though it remains largely in the research phase without widespread commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.500 | eV | — | ||
Magnetic Moment(μB) | -1.055e-14 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7600 | eV/atom | — |