LaInO3
semiconductorLaInO3 is a perovskite-structured ceramic compound composed of lanthanum, indium, and oxygen, belonging to the class of mixed-metal oxides with potential semiconductor properties. This material is primarily of research and development interest rather than established in high-volume production, with investigations focused on optoelectronic devices, photocatalysis, and solid-state applications where its wide bandgap and crystalline structure may offer advantages over more conventional semiconductors. Engineers evaluating LaInO3 should recognize it as an emerging material where material selection is driven by specific functional requirements—such as photocatalytic activity or transparent conductivity—rather than cost or immediate commercial availability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB)2 entries | — | μB | — | — | |
| ↳ | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |