LaInO2S
semiconductorLaInO2S is an oxysulfide semiconductor compound combining lanthanum, indium, oxygen, and sulfur elements, belonging to the family of rare-earth-doped semiconductors under active research for optoelectronic and photocatalytic applications. This material is primarily investigated in laboratory and early-stage development contexts for photocatalysis (water splitting, pollutant degradation), visible-light-responsive solar energy conversion, and next-generation display phosphor applications, offering potential advantages over traditional metal oxides due to its mixed anion structure that can engineer bandgap and optical response. LaInO2S and related oxysulfides remain largely in the research phase rather than established industrial production, making them candidates for engineers developing advanced energy or environmental remediation technologies who can tolerate material development timelines.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |