LaInO2S

semiconductor

· LaInO2S

LaInO2S is an oxysulfide semiconductor compound combining lanthanum, indium, oxygen, and sulfur elements, belonging to the family of rare-earth-doped semiconductors under active research for optoelectronic and photocatalytic applications. This material is primarily investigated in laboratory and early-stage development contexts for photocatalysis (water splitting, pollutant degradation), visible-light-responsive solar energy conversion, and next-generation display phosphor applications, offering potential advantages over traditional metal oxides due to its mixed anion structure that can engineer bandgap and optical response. LaInO2S and related oxysulfides remain largely in the research phase rather than established industrial production, making them candidates for engineers developing advanced energy or environmental remediation technologies who can tolerate material development timelines.

photocatalytic water splittingpollutant degradation/environmental remediationvisible-light photocatalyststhin-film optoelectronicsnext-generation solar cellsresearch-stage phosphor materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.500	eV	—
Magnetic Moment(μB)	0.0000400	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaInO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control