LaInN3 — Properties & Data | MatWorld

LaInN3

ceramic

· LaInN3

LaInN3 is a ternary nitride ceramic compound combining lanthanum, indium, and nitrogen. This material belongs to the rare-earth nitride family and is primarily of research and developmental interest rather than established commercial use. LaInN3 is investigated for advanced semiconductor and optoelectronic applications where rare-earth doping and nitride chemistry offer potential for high-temperature stability, wide bandgap properties, and unique electronic characteristics; it represents an emerging alternative to more conventional III-N semiconductors (GaN, InN) in specialized applications requiring rare-earth functionality.

wide-bandgap semiconductorsoptoelectronic devices (research stage)high-temperature electronicsrare-earth nitride materialsadvanced photonics (exploratory)materials research and development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.277	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.220	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental