LaIn3S6 is a ternary semiconductor compound composed of lanthanum, indium, and sulfur, belonging to the family of rare-earth metal chalcogenides. This material is primarily of research interest for optoelectronic and photonic device applications, where its layered crystal structure and tunable bandgap make it a candidate for light emission, detection, and nonlinear optical effects. While not yet widely commercialized in mainstream engineering, LaIn3S6 represents the broader class of rare-earth indium sulfides being investigated as alternatives to conventional semiconductors in niche applications requiring wide-gap semiconductivity or enhanced optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.030 | eV | — |