LaHfO3 is a rare-earth hafnate ceramic compound combining lanthanum and hafnium oxides, belonging to the perovskite family of high-refractive-index materials. This material is primarily investigated for advanced dielectric and optical applications, particularly in gate dielectrics for next-generation semiconductor devices and as a high-k material alternative to traditional silica in integrated circuits. Its high thermal stability, low leakage current characteristics, and compatibility with silicon processing make it a candidate for scaling beyond conventional gate oxide limits in microelectronics, though it remains largely in research and early development stages rather than mainstream production use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · PBE | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | DFT | ||
| ↳ | -0.00701 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -3.481 | eV/atom | DFT | ||
| ↳ | 0.1600 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data