LaGeO2N

semiconductor

· LaGeO2N

LaGeO2N is an experimental oxynitride semiconductor compound combining lanthanum, germanium, oxygen, and nitrogen elements. This material belongs to the rare-earth oxynitride family, which is actively researched for optoelectronic and photocatalytic applications where improved band gap tuning and visible-light response are sought compared to conventional oxide semiconductors. The incorporation of nitrogen into the lanthanum germanate lattice modifies electronic properties, making it potentially attractive for next-generation photovoltaic, photocatalytic water splitting, and visible-light-responsive sensor applications, though industrial deployment remains limited and the material is primarily in academic development stages.

photocatalytic water splittingvisible-light photocatalystsoptoelectronic devicesexperimental semiconductorsenvironmental remediationresearch-phase materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	-0.000305	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control