LaGaS3

semiconductor

· LaGaS3

LaGaS₃ is a ternary sulfide semiconductor compound combining lanthanum, gallium, and sulfur, belonging to the broader family of rare-earth chalcogenides. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its bandgap and crystal structure offer potential advantages in UV-visible light absorption and emission devices. Compared to more established semiconductors like GaAs or CdTe, LaGaS₃ remains in early-stage development but is notable for incorporating rare-earth elements, which can enable unique optical and electronic properties relevant to specialized photonic and energy conversion systems.

optoelectronic devices (research)photovoltaic absorber layersUV-visible photodetectorsthin-film optical coatingsphosphor and scintillator materialshigh-bandgap semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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LaGaS3

Electrical Properties

Regulatory Screening

Environmental

Export Control