LaBO₂S is a lanthanum-containing ternary semiconductor compound combining rare-earth, boron, and sulfur chemistry. This material is primarily of research interest for optoelectronic and photocatalytic applications, where the rare-earth dopant and mixed anion structure can enable novel electronic and optical properties. LaBO₂S represents an emerging class of sulfide semiconductors being investigated for solar energy conversion, environmental remediation, and next-generation lighting technologies, offering potential advantages over simpler binary semiconductors through compositional engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.200 | eV | — | ||
Magnetic Moment(μB) | -0.000111 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8200 | eV/atom | — |