LaAsO3 is a lanthanum arsenate compound belonging to the rare-earth arsenate ceramic family, typically investigated as a semiconductor material with potential for specialized electronic and photonic applications. This material remains largely in the research and development phase, with primary interest in contexts requiring rare-earth-doped ceramics for scintillation, luminescence, or wide-bandgap semiconductor functionality. Engineers considering LaAsO3 would typically be exploring emerging alternatives to more conventional rare-earth compounds in niche applications where arsenic-based hosts offer advantages in crystal structure or optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.8000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | -0.0000361 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.415 | eV/atom | — | ||
| ↳ | 0.4400 | eV/atom | — |