LaAs₂ is a lanthanum arsenide ceramic compound belonging to the rare-earth pnictide family, typically studied in materials research for its potential semiconductor and optoelectronic properties. While not widely commercialized in mainstream engineering applications, this material class is investigated for specialized high-frequency electronics, infrared devices, and quantum materials research where rare-earth compounds offer unique electronic band structures and thermal properties. Engineers considering rare-earth arsenides generally seek alternatives to conventional semiconductors in extreme-environment or high-performance niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2264 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3400 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.135 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data