LaAlO2S

semiconductor

· LaAlO2S

LaAlO₂S is a lanthanum aluminum oxysulfide semiconductor compound combining rare-earth and transition-metal elements in a mixed anionic (oxygen/sulfur) framework. This is a research-phase material primarily investigated for optoelectronic and photocatalytic applications, belonging to the broader family of layered oxychalcogenides and rare-earth semiconductors. LaAlO₂S and related compounds are notable for their tunable bandgap and potential for visible-light photocatalysis, offering an alternative to traditional wide-bandgap oxides (like TiO₂) in applications requiring improved light absorption and chemical stability.

photocatalysis and water treatmentoptoelectronic devices and sensorsenvironmental remediationrare-earth semiconductor researchvisible-light-active catalysts

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.300	eV	—
Magnetic Moment(μB)	0.000105	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaAlO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control