La5In3(S3O)3

semiconductor

· La5In3(S3O)3

La5In3(S3O)3 is an experimental mixed-anion semiconductor compound containing lanthanum, indium, sulfur, and oxygen, belonging to the family of rare-earth chalcogenide oxides. This material is currently a research-phase compound rather than an established industrial product; it represents exploration into novel semiconducting phases that combine rare-earth and post-transition metal chemistry with hybrid sulfide-oxide bonding, which may offer tunable electronic or photonic properties distinct from conventional semiconductors.

photovoltaic researchoptoelectronic devicesrare-earth semiconductorsmaterials discoverythin-film depositionband-gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La5In3(S3O)3

Electrical Properties

Regulatory Screening

Environmental

Export Control