La3InGe0.5S7

semiconductor

· La3InGe0.5S7

La3InGe0.5S7 is a mixed-metal sulfide semiconductor compound combining rare-earth lanthanum, indium, and germanium in a sulfide matrix, representing an experimental composition within the broader family of chalcogenide semiconductors. This material is currently in research phase and belongs to the class of wide-bandgap semiconductors being investigated for optoelectronic and photonic applications where sulfide-based systems offer tunable band gaps and potential for nonlinear optical response. The incorporation of rare-earth lanthanum and the specific Ge/In ratio suggest potential utility in solid-state lighting, radiation detection, or infrared sensing applications where chalcogenide semiconductors have inherent advantages over oxide alternatives.

Infrared photonics (research)Nonlinear optical devices (exploratory)Radiation detection (development)Wide-bandgap semiconductorsChalcogenide optoelectronics (emerging)Solid-state lighting components (advanced research)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.610	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La3InGe0.5S7

Electrical Properties

Regulatory Screening

Environmental

Export Control