La3GaGe0.5S7

semiconductor

· La3GaGe0.5S7

La₃GaGe₀.₅S₇ is a rare-earth-containing mixed-metal sulfide semiconductor compound, combining lanthanum with gallium and germanium in a sulfide host lattice. This is an experimental material primarily of research interest for its potential in infrared optics and photonics, where the sulfide framework and rare-earth doping can enable mid-to-far-infrared transmission and nonlinear optical response. The combination of rare-earth and post-transition metal sulfides represents a materials family under investigation for next-generation infrared windows, scintillators, and wide-bandgap optoelectronic applications where conventional oxide ceramics fall short.

infrared opticsnonlinear photonicsresearch semiconductorsrare-earth scintillatorswide-bandgap devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.540	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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La3GaGe0.5S7

Electrical Properties

Regulatory Screening

Environmental

Export Control