La3Ga1Ge0.5S7

semiconductor

· La3Ga1Ge0.5S7

La₃Ga₁Ge₀.₅S₇ is a mixed-metal chalcogenide semiconductor combining rare-earth (lanthanum), post-transition (gallium), and group-14 (germanium) elements in a sulfide matrix. This is a research-stage compound material, part of the broader family of quaternary and higher-order chalcogenides being investigated for solid-state ionic conductivity and photonic applications where conventional oxide ceramics fall short.

solid-state electrolytessuperionic conductorsphotonic materials researchall-solid-state batteriesinfrared opticsexperimental semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.540	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La3Ga1Ge0.5S7

Electrical Properties

Regulatory Screening

Environmental

Export Control