La3Ga1Ge0.5S7
semiconductor· La3Ga1Ge0.5S7
La₃Ga₁Ge₀.₅S₇ is a mixed-metal chalcogenide semiconductor combining rare-earth (lanthanum), post-transition (gallium), and group-14 (germanium) elements in a sulfide matrix. This is a research-stage compound material, part of the broader family of quaternary and higher-order chalcogenides being investigated for solid-state ionic conductivity and photonic applications where conventional oxide ceramics fall short.
solid-state electrolytessuperionic conductorsphotonic materials researchall-solid-state batteriesinfrared opticsexperimental semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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