La2Ga0.33SbS5

semiconductor

· La2Ga0.33SbS5

La₂Ga₀.₃₃SbS₅ is a mixed-metal chalcogenide semiconductor compound combining lanthanum, gallium, antimony, and sulfur in a layered crystal structure. This is a research-phase material under investigation for solid-state ionic and photonic applications, particularly as a potential superionic conductor or light-emitting semiconductor in the emerging field of rare-earth chalcogenide systems. The partial gallium substitution and mixed-metal framework distinguish it from conventional III–V semiconductors, making it of interest for next-generation energy storage, sensing, or optoelectronic devices where both ionic and electronic transport properties are exploited.

solid-state electrolytesionic conductorsphotonic materials (research)thermal management coatingsnext-generation batteries (exploratory)wide-bandgap semiconductors (laboratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.760	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La2Ga0.33SbS5

Electrical Properties

Regulatory Screening

Environmental

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