La1 W1 N3

semiconductor

· La1 W1 N3

La₁W₁N₃ is a ternary nitride ceramic compound containing lanthanum, tungsten, and nitrogen, representing an experimental or emerging material in the refractory nitride family. This composition is primarily of academic and research interest for advanced ceramic and semiconductor applications, as it combines the high-temperature stability of tungsten nitrides with the electropositive character of lanthanum to create potentially novel electronic and refractory properties. Industrial adoption remains limited, but materials in this chemical space are being explored for next-generation high-temperature electronics, diffusion barriers, and specialized coatings where extreme thermal stability and chemical resistance are required.

research-phase materialsrefractory ceramicshigh-temperature electronicsdiffusion barriersadvanced coatingssemiconductor device engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8182	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.288	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La1 W1 N3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control