La1 W1 N3
semiconductorLa₁W₁N₃ is a ternary nitride ceramic compound containing lanthanum, tungsten, and nitrogen, representing an experimental or emerging material in the refractory nitride family. This composition is primarily of academic and research interest for advanced ceramic and semiconductor applications, as it combines the high-temperature stability of tungsten nitrides with the electropositive character of lanthanum to create potentially novel electronic and refractory properties. Industrial adoption remains limited, but materials in this chemical space are being explored for next-generation high-temperature electronics, diffusion barriers, and specialized coatings where extreme thermal stability and chemical resistance are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |