La1 In3

semiconductor
· La1 In3

La1In3 is an intermetallic compound composed of lanthanum and indium, belonging to the rare-earth intermetallic family. This material is primarily of research interest for semiconductor and electronic applications, particularly in contexts involving rare-earth elements where unique electronic or thermal properties are sought. While not widely commercialized in high-volume applications, La1In3 and related lanthanum-indium phases are investigated for potential use in advanced electronics, photonic devices, and thermoelectric systems where the combination of rare-earth and post-transition metal elements may offer novel property combinations.

research semiconductorsrare-earth electronicsthermoelectric materials (experimental)photonic devices (development stage)intermetallic compoundsadvanced electronic materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.