La1 In1

semiconductor

· La1 In1

La₁In₁ is an intermetallic compound formed from lanthanum and indium in a 1:1 stoichiometric ratio, belonging to the family of rare-earth–group-III metal compounds. This material is primarily investigated in research contexts for potential applications in semiconductor devices, thermoelectric systems, and advanced electronic materials, where the combination of a rare-earth element with indium offers opportunities for tuning electronic structure and thermal transport properties.

thermoelectric devicessemiconductor researchrare-earth intermetallicshigh-temperature electronicsmaterials characterization studiesexperimental compound development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03230	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5390	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La1 In1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control