La1 As1

semiconductor
· La1 As1

Lanthanum arsenide (LaAs) is a III-V semiconductor compound composed of the rare-earth element lanthanum and arsenic, belonging to the family of binary intermetallic semiconductors. While primarily of research interest rather than high-volume commercial use, LaAs and related rare-earth pnictides are investigated for potential applications in high-frequency optoelectronics and quantum devices where the unique band structure and rare-earth properties could offer advantages over conventional III-V materials like GaAs. Engineers evaluating this material should recognize it as an emerging compound with specialized potential in niche applications where rare-earth doping or rare-earth-based semiconductors provide performance benefits, though practical availability and processing maturity remain limited compared to established semiconductor platforms.

research semiconductorshigh-frequency optoelectronicsquantum devicesrare-earth electronicsphotovoltaic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.