La1 As1

Lanthanum arsenide (LaAs) is a III-V semiconductor compound composed of the rare-earth element lanthanum and arsenic, belonging to the family of binary intermetallic semiconductors. While primarily of research interest rather than high-volume commercial use, LaAs and related rare-earth pnictides are investigated for potential applications in high-frequency optoelectronics and quantum devices where the unique band structure and rare-earth properties could offer advantages over conventional III-V materials like GaAs. Engineers evaluating this material should recognize it as an emerging compound with specialized potential in niche applications where rare-earth doping or rare-earth-based semiconductors provide performance benefits, though practical availability and processing maturity remain limited compared to established semiconductor platforms.