KSiBiS4 — Properties & Data | MatWorld

KSiBiS4

Name: KSiBiS4
Brand: MatWorld

semiconductor

· KSiBiS4

KSiBiS₄ is a quaternary semiconductor compound composed of potassium, silicon, bismuth, and sulfur elements, belonging to the family of metal chalcogenides. This is a research-stage material with potential applications in optoelectronic and photovoltaic devices, where its bandgap and crystal structure may enable light absorption or emission in specialized wavelength ranges. The material represents an emerging class of sulfide semiconductors that researchers are exploring as alternatives to more conventional III-V and II-VI semiconductors, particularly for cost-effective or environmentally benign device fabrication.

experimental optoelectronicsphotovoltaic researchthin-film semiconductorsinfrared detectorsmaterials research & developmentalternative semiconductor compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	3.764	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.250	eV	Measured
↳	1.985	eV	DFT · OptB88vdW
↳	2.587	eV	DFT · TBmBJ
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.442	-	DFT · OptB88vdW
↳	6.064	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00106	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000594	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-155.5	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	369.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	11.00	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.8798	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

KSiBiS4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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