KBiS₂ is a ternary semiconductor compound composed of potassium, bismuth, and sulfur, belonging to the layered chalcogenide material family. This is primarily a research-phase compound investigated for its potential in optoelectronic and thermoelectric applications, where the combination of elements offers tunable bandgap properties and anisotropic transport characteristics typical of layered semiconductors. Engineers would consider KBiS₂ for emerging technologies requiring non-toxic alternatives to lead-based semiconductors or for applications exploiting its layered crystal structure, though it remains largely in development stages with limited commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,515.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 4,689.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1714 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.9000 | eV | — | ||
| ↳ | 0.8600 | eV | — | ||
| ↳ | 1.642 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9311 | eV/atom | — |