K8 P12

semiconductor

· K8 P12

K8 P12 is a semiconductor material, likely a phosphide-based compound (possible InP, GaP, or similar III-V semiconductor), though exact composition is not specified. This material family is used in optoelectronic and high-frequency applications where direct bandgap and electron mobility are critical performance drivers. Engineers select phosphide semiconductors for applications requiring efficient light emission, high-speed switching, or operation in radiation-rich or high-temperature environments where silicon reaches its limits.

optoelectronic devicesRF/microwave circuitsinfrared emitters/detectorshigh-speed transistorsspace electronicsintegrated photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.053	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5240	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K8 P12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control