K8P1O3 is a potassium-based oxide semiconductor compound with potential applications in advanced electronic and photonic devices. While specific industrial production data is limited, this material belongs to the broader family of mixed-metal oxides that are actively researched for next-generation semiconductor technologies. Engineers would evaluate this material for applications requiring specific bandgap properties, ionic conductivity, or optical characteristics that distinguish it from conventional silicon or oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,587.2 | ksi | — | ||
Shear Modulus(G) | 1,473.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.673 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9140 | eV/atom | — |