K8N3O1 is a ceramic semiconductor compound combining potassium, nitrogen, and oxygen elements. While not a widely commercialized material, it belongs to the family of oxynitride ceramics—materials that combine the mechanical hardness of ceramics with tunable electronic properties for specialized semiconductor applications. Research interest in such compounds focuses on developing wide-bandgap semiconductors for high-temperature electronics, photocatalysis, and emerging device architectures where traditional silicon or III-V semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24.40 | GPa | — | ||
Shear Modulus(G) | 12.66 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.452 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.03000 | eV/atom | — |