K6CdTe4 is a cadmium telluride-based semiconductor compound belonging to the II-VI semiconductor family, combining cadmium and tellurium in a specific stoichiometric ratio. This material is primarily investigated for optoelectronic and photovoltaic applications, particularly in research contexts exploring high-bandgap semiconductors for X-ray and gamma-ray detection, as well as advanced thin-film photovoltaic devices where cadmium telluride systems have demonstrated commercial viability in solar cell technology. The cadmium telluride family is notable for its direct bandgap, high absorption coefficient, and radiation detection capabilities, making it an alternative to silicon-based semiconductors in specialized radiation sensing and high-efficiency solar conversion applications, though handling considerations due to cadmium toxicity distinguish its use in regulated industrial environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.266 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.510 | eV | — | ||
| ↳ | 1.517 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.506 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.1202 | C/m² | — | ||
Seebeck Coefficient(S) | -91.10 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.048 | eV/atom | — |