K6 Bi2 is an experimental bismuth-based semiconductor compound, likely part of research into bismuth-containing materials for optoelectronic and thermoelectric applications. While not yet a commercial material, bismuth semiconductors are investigated for their potential in infrared detectors, narrow-bandgap devices, and thermoelectric energy conversion where bismuth's unique electronic structure offers advantages over traditional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,755 | ksi | — | ||
Shear Modulus(G) | 1,018.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06210 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4620 | eV/atom | — |