K6Al4As6 is an experimental III-V compound semiconductor composed of potassium, aluminum, and arsenic elements. This material belongs to the family of ternary arsenide semiconductors under active research for optoelectronic and high-frequency applications. While not yet established in mainstream commercial production, compounds in this material class are investigated for potential use in advanced photonic devices, high-speed electronics, and specialized semiconductor heterostructures where the band gap and carrier mobility properties could offer advantages over conventional binary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,119.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,721.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.371 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6630 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data