K4Zn1As2 is a quaternary semiconductor compound belonging to the family of zinc arsenide-based materials, likely explored for optoelectronic or thermoelectric applications. This is a research-stage material rather than a commercially established semiconductor; compounds in this family are investigated for their potential band gap engineering, photovoltaic efficiency, or thermal transport properties. Interest in such zinc-arsenic systems typically centers on scenarios where conventional semiconductors (Si, GaAs, CdTe) face performance or cost limitations, though K4Zn1As2 remains primarily within the academic/exploratory domain.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,483.3 | ksi | — | ||
Shear Modulus(G) | 1,310.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2123 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5360 | eV/atom | — |