K₄Si₄Bi₄S₁₆ is a quaternary chalcogenide semiconductor compound combining potassium, silicon, bismuth, and sulfur elements. This material belongs to the family of complex sulfide semiconductors, which are primarily of research and developmental interest rather than established commercial use. Chalcogenide semiconductors containing bismuth are investigated for potential applications in thermoelectric devices, infrared optics, and advanced photovoltaic systems due to their tunable bandgaps and carrier properties, though K₄Si₄Bi₄S₁₆ specifically remains in the exploratory phase of materials characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.985 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8800 | eV/atom | — |