K4 Ni2 As4
semiconductorK₄Ni₂As₄ is a quaternary nickel arsenide semiconductor compound combining potassium, nickel, and arsenic elements in a layered crystal structure. This material is primarily of research and developmental interest rather than established industrial production, studied for potential applications in solid-state electronics and thermoelectric devices where the combination of metallic and semiconducting character may offer unique transport properties. The compound belongs to a family of pnictide-based materials that has attracted attention for exploring superconductivity and novel electronic behavior, making it relevant for materials scientists investigating next-generation semiconductor and energy conversion technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,700.1 | ksi | — | ||
Shear Modulus(G) | 2,150.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02560 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4800 | eV/atom | — |