K4 Na2 Ga2 As4

semiconductor

· K4 Na2 Ga2 As4

K₄Na₂Ga₂As₄ is a mixed-cation III-V semiconductor compound containing potassium, sodium, gallium, and arsenic elements. This is a research-phase material studied primarily for its potential in optoelectronic and photovoltaic applications, where the combination of alkali and group III-V elements may offer tunable band gap properties or enhanced light absorption characteristics compared to binary GaAs semiconductors.

photovoltaic researchoptoelectronic devicesIII-V semiconductor developmentband gap engineeringexperimental solar cellsquantum materials research

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9461	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5730	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K4 Na2 Ga2 As4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards