K4 Na2 Ga2 As4
semiconductor· K4 Na2 Ga2 As4
K₄Na₂Ga₂As₄ is a mixed-cation III-V semiconductor compound containing potassium, sodium, gallium, and arsenic elements. This is a research-phase material studied primarily for its potential in optoelectronic and photovoltaic applications, where the combination of alkali and group III-V elements may offer tunable band gap properties or enhanced light absorption characteristics compared to binary GaAs semiconductors.
photovoltaic researchoptoelectronic devicesIII-V semiconductor developmentband gap engineeringexperimental solar cellsquantum materials research
Compliance & Regulations
?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
Quality & Standards
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.