K4 Mn2 H4 O2 F10
semiconductorK4Mn2H4O2F10 is a complex inorganic compound containing potassium, manganese, hydrogen, oxygen, and fluorine—a material family rarely encountered in conventional engineering but potentially relevant to electrochemistry and solid-state chemistry research. This compound exhibits semiconductor properties and belongs to the broader class of mixed-metal fluoride and oxide systems that are actively investigated for battery technologies, ion conductors, and catalytic applications. While not yet widely deployed in production engineering, materials of this composition family are of interest to researchers exploring next-generation energy storage, fluoride-based electrolytes, and advanced ceramic systems where the combination of manganese redox activity and fluoride mobility could offer novel functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |