K4Mg4O6 is an experimental mixed-metal oxide semiconductor compound containing potassium and magnesium. This material belongs to the family of ternary and higher-order oxide semiconductors, which are primarily of research interest for next-generation electronic and optoelectronic applications. While not yet established in commercial production, materials in this class are investigated for potential use in transparent conductors, wide-bandgap semiconductors, and solid-state ionic applications where the combination of light elements and tunable electronic properties offers advantages over conventional single-component oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,563.5 | ksi | — | ||
Shear Modulus(G) | 5,676.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.311 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.253 | eV/atom | — |